JPS5897847A - 集積回路装置 - Google Patents

集積回路装置

Info

Publication number
JPS5897847A
JPS5897847A JP56197387A JP19738781A JPS5897847A JP S5897847 A JPS5897847 A JP S5897847A JP 56197387 A JP56197387 A JP 56197387A JP 19738781 A JP19738781 A JP 19738781A JP S5897847 A JPS5897847 A JP S5897847A
Authority
JP
Japan
Prior art keywords
conductivity type
source
channel
drain layer
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56197387A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0122733B2 (en]
Inventor
Kunimitsu Fujiki
藤木　國光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56197387A priority Critical patent/JPS5897847A/ja
Publication of JPS5897847A publication Critical patent/JPS5897847A/ja
Publication of JPH0122733B2 publication Critical patent/JPH0122733B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Wire Bonding (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP56197387A 1981-12-08 1981-12-08 集積回路装置 Granted JPS5897847A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56197387A JPS5897847A (ja) 1981-12-08 1981-12-08 集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56197387A JPS5897847A (ja) 1981-12-08 1981-12-08 集積回路装置

Publications (2)

Publication Number Publication Date
JPS5897847A true JPS5897847A (ja) 1983-06-10
JPH0122733B2 JPH0122733B2 (en]) 1989-04-27

Family

ID=16373657

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56197387A Granted JPS5897847A (ja) 1981-12-08 1981-12-08 集積回路装置

Country Status (1)

Country Link
JP (1) JPS5897847A (en])

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961047A (ja) * 1982-09-29 1984-04-07 Hitachi Ltd 半導体集積回路装置
US4589007A (en) * 1982-09-06 1986-05-13 Hitachi, Ltd. Semiconductor integrated circuit device
US4716450A (en) * 1984-06-26 1987-12-29 Nec Corporation Semiconductor integrated circuit having complementary field effect transistors
US4816887A (en) * 1983-07-09 1989-03-28 Fujitsu Limited CMOS gate array with orthagonal gates
JPH023279A (ja) * 1988-06-20 1990-01-08 Nippon Telegr & Teleph Corp <Ntt> 相補型ｍｉｓマスタスライスｌｓｉの基本セル

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0353520U (en]) * 1989-09-28 1991-05-23

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211248A (en) * 1981-06-22 1982-12-25 Hitachi Ltd Semiconductor integrated circuit device
JPS5856354A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd マスタ−スライスｌｓｉ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211248A (en) * 1981-06-22 1982-12-25 Hitachi Ltd Semiconductor integrated circuit device
JPS5856354A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd マスタ−スライスｌｓｉ

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4589007A (en) * 1982-09-06 1986-05-13 Hitachi, Ltd. Semiconductor integrated circuit device
JPS5961047A (ja) * 1982-09-29 1984-04-07 Hitachi Ltd 半導体集積回路装置
US4816887A (en) * 1983-07-09 1989-03-28 Fujitsu Limited CMOS gate array with orthagonal gates
US4716450A (en) * 1984-06-26 1987-12-29 Nec Corporation Semiconductor integrated circuit having complementary field effect transistors
JPH023279A (ja) * 1988-06-20 1990-01-08 Nippon Telegr & Teleph Corp <Ntt> 相補型ｍｉｓマスタスライスｌｓｉの基本セル

Also Published As

Publication number Publication date
JPH0122733B2 (en]) 1989-04-27

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